? 2000 ixys all rights reserved features features features features features ? international standard packages ? minibloc, with aluminium nitride isolation ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications applications applications applications applications ? dc-dc converters ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? temperature and lighting controls advantages advantages advantages advantages advantages ? easy to mount ? space savings ? high power density symbol symbol symbol symbol symbol test conditions test conditions test conditions test conditions test conditions characteristic values characteristic values characteristic values characteristic values characteristic values (t j = 25 c, unless otherwise specified) min. min. min. min. min. typ. typ. typ. typ. typ. max. max. max. max. max. v v v v v dss dss dss dss dss v gs = 0 v, i d = 3 ma 85 v v v v v v gh(th) gh(th) gh(th) gh(th) gh(th) v ds = v gs , i d = 8 ma 2.0 4.0 v i i i i i gss gss gss gss gss v gs = 20 v dc , v ds = 0 200 na i i i i i dss dss dss dss dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c2ma r r r r r ds(on) ds(on) ds(on) ds(on) ds(on) v gs = 10 v, i d = 100a 4.4 m ? pulse test, t 300 s, duty cycle d 2 % symbol symbol symbol symbol symbol test conditions test conditions test conditions test conditions test conditions maximum ratings maximum ratings maximum ratings maximum ratings maximum ratings v v v v v dss dss dss dss dss t j = 25 c to 150 c85v v v v v v dgr dgr dgr dgr dgr t j = 25 c to 150 c; r gs = 1 m ? 85 v v v v v v gs gs gs gs gs continuous 20 v v v v v v gsm gsm gsm gsm gsm transient 30 v i i i i i d25 d25 d25 d25 d25 t c = 25 c, chip capability 280 a i i i i i l(rms) l(rms) l(rms) l(rms) l(rms) terminal current limit 100 a i i i i i dm dm dm dm dm t c = 25 c, pulse width limited by t jm 1120 a i i i i i ar ar ar ar ar t c = 25 c 200 a e e e e e ar ar ar ar ar t c = 25 c64mj e e e e e as as as as as t c = 25 c4j dv/dt dv/dt dv/dt dv/dt dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p p p p p d d d d d t c = 25 c 700 w t t t t t j j j j j -55 ... +150 c t t t t t jm jm jm jm jm 150 c t t t t t stg stg stg stg stg -55 ... +150 c v v v v v isol isol isol isol isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m m m m m d d d d d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.5/13 nm/lb.in. weight weight weight weight weight 30 g hiperfet hiperfet hiperfet hiperfet hiperfet tm tm tm tm tm power mosfets power mosfets power mosfets power mosfets power mosfets single die mosfet single die mosfet single die mosfet single die mosfet single die mosfet n-channel enhancement mode avalanche rated, high dv/dt, low t rr 98747 (09/00) d s g s s g s d minibloc, sot-227 b (ixfn) e153432 g = gate d = drain s = source either source terminal at minibloc can be used as main or kelvin source advanced technical information ixfn ixfn ixfn ixfn ixfn 280n085 280n085 280n085 280n085 280n085 v dss = 85 v i d25 = 280 a r ds(on) = 4.4 m m m m m ? ? ? ? ? t t t t t rr 250 ns 250 ns 250 ns 250 ns 250 ns
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixfn 280n085 ixfn 280n085 ixfn 280n085 ixfn 280n085 ixfn 280n085 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 60a, pulse test 80 105 s c iss 16000 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 6500 pf c rss 2800 pf t d(on) 140 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 100a 95 n s t d(off) r g = 2 ? (external), 200 n s t f 33 ns q g(on) 600 nc q gs v gs = 10 v, v ds = 50v, i d = 100a 110 nc q gd 300 nc r thjc 0.18 k/w r thck 0.05 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 280 a i sm repetitive; 1120 a pulse width limited by t jm v sd i f = 100a, v gs = 0 v, 1.2 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 50a, -di/dt = 100 a/ s, v r = 50v t j =25 c 250 ns q rm 1.4 c i rm 8a minibloc, sot-227 b m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004
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